coefficient of resistance
英 [ˌkəʊɪˈfɪʃnt ɒv rɪˈzɪstəns]
美 [ˌkoʊɪˈfɪʃnt əv rɪˈzɪstəns]
阻抗系数
双语例句
- From resistance-temperature ( R-T) measurement and calculation, it is found that both R and temperature coefficient of resistance ( TCR) of the films are increased after annealing.
电阻温度特性测试表明，退火后薄膜的电阻（R）和电阻温度系数（TCR）都明显增大。 - Negative Temperature Coefficient of Resistance of Nb-doped SnO_2 Ceramics
铌掺杂氧化锡陶瓷的电阻负温度系数特性 - The Application of Temperature Coefficient of Resistance on Reliability Early Detection
电阻温度系数研究及其在可靠性早期监测中的应用 - The temperature coefficient of resistance ( TCR) of these samples have been studied.
多晶材料，研究了它们的电阻温度系数（TCR）。 - As the detecting material of uncooled infrared detectors, vanadium oxide ( VOX) thin films need high temperature coefficient of resistance ( TCR) and suitable film resistance for using of the device.
氧化钒薄膜作为非制冷红外探测器的热敏材料，要求具有高的电阻温度系数（TCR）与合适的电阻值，以满足器件的应用。 - Hydrothermal Synthesis and Characterization of the Perovskite Niobates; Negative Temperature Coefficient of Resistance of Nb-doped SnO_2 Ceramics
钙钛矿型铌复合氧化物的水热合成及表征铌掺杂氧化锡陶瓷的电阻负温度系数特性 - It is the key for the devices to select the film for material with large temperature coefficient of resistance and the detector structure of good thermal isolation ( i.e. bridge structure).
指出了选用具有大的电阻温度系数的膜电阻材料和优良的热绝缘结构（如桥式结构）是研制器件的关键。 - Investigation on Temperature Coefficient of Resistance in La_ ( 0.7-x) Gd_xSr_ ( 0.3) MnO_3 System
La（0.7-x）GdxSr（0.3）MnO3体系的电阻温度系数研究 - With the same method, the coefficient of resistance can also be determined.
使用同一方法还可以确定阻力系数。 - The temperature coefficient of resistance with tempering temperature and its relationship with non-crystallinity was studied.
研究了这一合金薄膜电阻温度系数TCR随热处理温度的变化以及它与非晶度的关系。 - The ultimate carrying capacity of a bridge is estimated with spatial finite element software-Ansys. Then the computing results are compared with the results computed by simplified plane beam elements, and the modified coefficient of resistance model of the bridge under the action of motor is gained.
用空间有限元软件Ansys计算了一座实桥的极限承载力，并将计算结果与简化平面杆系理论的计算结果进行比较，得出了该座桥梁在汽车荷载作用下的抗力计算模式修正系数。 - The change in electrical resistance of Pd-, Cu-, Ni-and Fe-base metallic glasses in tensile process and the effect of composition, cold deformation and heat treatment on the strain coefficient of resistance k, have been investigated.
本文系统地研究了Pd-，Cu-，Ni-和Fe-基非晶态合金在拉伸过程中的电阻变化以及成分、冷变形和热处理对电阻应变系数k的影响。 - For high nitrogen Cr Si Ni N films in comparison with low nitrogen Cr Si Ni N films, the variation of electrical resistance was smaller during the heat treatment, and the higher annealing temperatures was needed to obtain a small temperature coefficient of resistance ( TCR).
与低氮含量CrSiNiN薄膜相比，高氮含量CrSiNiN薄膜的电阻值在热处理过程中变化较小、欲获得较小电阻温度系数（TCR）需要更高的退火温度。 - The test results indicate that there is significant difference between transition temperature, hysteresis width and temperature coefficient of resistance of the films prepared by the two methods.
对两种方法制备薄膜的性能测试结果表明，其转换温度、相变滞豫、热电阻温度系数等都有较大差别。 - Test of Temperature Coefficient of Resistance for Room Temperature IR Detection Thin Film
室温红外探测薄膜电阻温度系数测试技术 - The temperature coefficient of resistance is measured and over heat ratios with various input powers are determined.
测量了热膜的电阻温度系数，确定了热膜处于不同输入功率下的过热比。 - C. Magnetron Sputtering in this paper. The TCR ( Temperature Coefficient of Resistance) of the films were less than 20 × 10-6/ ℃ using optimized deposition parameters, which were adjacent to the bulk material, realized the films of manganin pressure sensors.
根据薄膜理论和工艺实验，采用直流磁控溅射技术对薄膜沉积的工艺参数进行了优化，获得了电阻温度系数TCR≤20×10-6/℃的锰铜薄膜，与块材接近，实现了锰铜压力传感器的薄膜化。 - Measuring principle and sensitivity of non-balanced bridge is analyzed. A method of measuring temperature coefficient of resistance by this bridge has been discussed in this paper result is accurate.
本文分析了非平衡电桥的测量原理及灵敏度，提出了一种测量电阻温度系数的方法，实测结果说明该方法是正确的。 - The thermal coefficient of resistance ( TCR) was high up to 10%/ K at 300K.
室温（300K）时的电阻-温度系数（TCR）可大于10%/K，是目前红外热成像薄膜TCR的四倍。 - The coefficient of resistance C_D is important for the establishment of the characteristics and shooting-table of a shell.
阻力系数CD对于确定弹的性能和射表是一个重要的量。 - The trend of new technique for manufacturing Ni-Cr alloy thin film with a combination of characteristics: high resistivity, low temperature coefficient of resistance ( CR), large gauge factor, and good thermal stability is presented.
阐明了制备具有高电阻率、低电阻温度系数、高应变灵敏系数、良好的热稳定性等优异综合性能的镍铬合金薄膜的新工艺发展趋势。 - Microstructures, temperature coefficient of resistance, temperature stability and the micromachining of the TiN_X thin films were investigated into details.
重点研究了薄膜的微观结构、电阻温度系数、电阻温度稳定性、薄膜的微加工等性质。 - Analysis and Research of the Extra Coefficient of Resistance in Inclining Pipeline
倾斜管道附加阻力系数的分析研究 - The measurement of the coefficient of resistance temperature of metallic conductor by unbalanced bridge
用非平衡电桥测金属导体的电阻温度系数 - The resistivity, squared resistance and temperature coefficient of resistance in hydrogenated silicon film decrease with the increasing of boron doping concentration.
通过研究硼掺杂浓度与氢化硅薄膜电学特性关系表明硼掺杂降低了薄膜的电阻率和方阻值，同时也降低了薄膜的温度电阻系数。 - The results show that the coefficient of resistance is tied up with flow patterns closely, and the changing trend of the resistance coefficient can objectively reflect the different flow patterns.
结果表明，阻力系数与流型密切相关，阻力系数的变化趋势可以客观地反映不同的流型。 - In addition, with the sputtering power reduced the temperature coefficient of resistance of the films gradually become smaller.
另外，随着功率的减小，薄膜的电阻温度系数逐渐变小。 - And then, photolithography and wet etching were used to pattern the ITO films for electrical measurement, which involved the measurement of temperature coefficient of resistance and the gauge factor.
然后用光刻和刻蚀的方法制作电学测试所需的图形。对于ITO薄膜的电学测试包括对其电阻温度系数和响应因子的测量两部分。 - Bolometer performance has been improved by micromachining technology-the preparation and integration of high temperature coefficient of resistance ( TCR) VOx, nitrogen-doped vanadium oxide and gold black of high infrared absorption, respectively.
通过制备具有高电阻温度系数（TCR）的氧化钒薄膜、掺氮氧化钒薄膜和黑金吸收层并利用微加工技术手段分别将它们集成在探测器上，提高了微测辐射热计的性能。